A Broadband Three-device Doherty Power Amplifier based on a Modified Load Modulation Network
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作者:
Chen, Shichang
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Hangzhou Dianzi Univ, Microelect CAD Ctr, Hangzhou 310018, Zhejiang, Peoples R ChinaHangzhou Dianzi Univ, Microelect CAD Ctr, Hangzhou 310018, Zhejiang, Peoples R China
Chen, Shichang
[1
]
Qiao, Pengfei
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Hangzhou Dianzi Univ, Microelect CAD Ctr, Hangzhou 310018, Zhejiang, Peoples R ChinaHangzhou Dianzi Univ, Microelect CAD Ctr, Hangzhou 310018, Zhejiang, Peoples R China
Qiao, Pengfei
[1
]
Wang, Gaofeng
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Hangzhou Dianzi Univ, Microelect CAD Ctr, Hangzhou 310018, Zhejiang, Peoples R ChinaHangzhou Dianzi Univ, Microelect CAD Ctr, Hangzhou 310018, Zhejiang, Peoples R China
Wang, Gaofeng
[1
]
Cheng, Zhiqun
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Hangzhou Dianzi Univ, Microelect CAD Ctr, Hangzhou 310018, Zhejiang, Peoples R ChinaHangzhou Dianzi Univ, Microelect CAD Ctr, Hangzhou 310018, Zhejiang, Peoples R China
Cheng, Zhiqun
[1
]
Xue, Quan
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机构:
City Univ Hong Kong, Dept Elect Engn, Kowloon, Hong Kong, Peoples R ChinaHangzhou Dianzi Univ, Microelect CAD Ctr, Hangzhou 310018, Zhejiang, Peoples R China
Xue, Quan
[2
]
机构:
[1] Hangzhou Dianzi Univ, Microelect CAD Ctr, Hangzhou 310018, Zhejiang, Peoples R China
[2] City Univ Hong Kong, Dept Elect Engn, Kowloon, Hong Kong, Peoples R China
来源:
2016 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS)
|
2016年
This paper proposes a broadband three-device Doherty power amplifier design. A new load modulation network with a shunt quarter-wavelength (lambda/4) short stub is introduced for bandwidth extension. Comprehensive analysis of the proposed configuration is given to illustrate the operational principle. For demonstration purpose, a twin-peaking single-carrier Doherty amplifier prototype is devised based on three identical 10W GaN HEMTs. Measurement results show that at least 40% drain efficiency is achieved at 8-dB back-off power, from 2.0 to 2.6 GHz.
机构:
Samsung Elect Co Ltd, Telecommun Syst Div, Gyeonggi Do 443742, South KoreaSamsung Elect Co Ltd, Telecommun Syst Div, Gyeonggi Do 443742, South Korea
Kim, Jangheon
;
Fehri, Bilel
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机构:
Univ Waterloo, Dept Elect & Comp Engn, Waterloo, ON N2L 3G1, CanadaSamsung Elect Co Ltd, Telecommun Syst Div, Gyeonggi Do 443742, South Korea
Fehri, Bilel
;
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机构:
Boumaiza, Slim
;
Wood, John
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机构:
Freescale Semicond Inc, RF Div, Tempe, AZ 85284 USASamsung Elect Co Ltd, Telecommun Syst Div, Gyeonggi Do 443742, South Korea
机构:
Samsung Elect Co Ltd, Telecommun Syst Div, Gyeonggi Do 443742, South KoreaSamsung Elect Co Ltd, Telecommun Syst Div, Gyeonggi Do 443742, South Korea
Kim, Jangheon
;
Fehri, Bilel
论文数: 0引用数: 0
h-index: 0
机构:
Univ Waterloo, Dept Elect & Comp Engn, Waterloo, ON N2L 3G1, CanadaSamsung Elect Co Ltd, Telecommun Syst Div, Gyeonggi Do 443742, South Korea
Fehri, Bilel
;
论文数: 引用数:
h-index:
机构:
Boumaiza, Slim
;
Wood, John
论文数: 0引用数: 0
h-index: 0
机构:
Freescale Semicond Inc, RF Div, Tempe, AZ 85284 USASamsung Elect Co Ltd, Telecommun Syst Div, Gyeonggi Do 443742, South Korea