Mono Vacancy Generation by Short Annealing of Nitrogen Doped FZ Silicon Wafers

被引：0

作者：

Abe, Takao ^{[1
]}

机构：

[1] ShinEtsu Handoutai, SEH Isobe R&D Ctr, Gunma 3790196, Japan

来源：

DEFECTS-RECOGNITION, IMAGING AND PHYSICS IN SEMICONDUCTORS XIV | 2012年 / 725卷

关键词：

Point defects; Doping nitrogen; Nitrogen molecule; Vacancy concentration; Deep levels; Diffusion coefficient; OXYGEN;

D O I：

10.4028/www.scientific.net/MSF.725.193

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Using the peculiar behavior of nitrogen molecules in FZ silicon crystals contained with a high concentration of vacancies, this paper describes the following four important values: the estimated vacancy concentrations, the deep levels at 0.44 eV under the conduction band for n-type and at 0.66 eV over the valence band for p-type for mono vacancies and the diffusion coefficient of the silicon interstitials DI-FZ = 1.3 x exp (- 4.5 eV/kT).

引用

页码：193 / 198

页数：6

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