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Floating-zone growth and characterization of single crystals of manganese orthosilicate, Mn2SiO4
被引:7
|作者:
Tang, Q.
[1
]
Dieckmann, R.
[1
]
机构:
[1] Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA
基金:
美国国家科学基金会;
关键词:
Floating zone technique;
Single crystal growth;
Manganese orthosilicate (Mn2SiO4);
Oxides;
TEPHROITE;
CZOCHRALSKI;
DIFFUSION;
FAYALITE;
DEFECTS;
D O I:
10.1016/j.jcrysgro.2012.08.054
中图分类号:
O7 [晶体学];
学科分类号:
0702 ;
070205 ;
0703 ;
080501 ;
摘要:
Using a floating zone technique and a passive afterheater, crack-free single crystals of manganese orthosilicate, Mn2SiO4, were grown along the three principle orientations in a reducing gas atmosphere at atmospheric pressure. The grown crystals were typically 5-7 mm in diameter and 20-40 mm in length. Well-developed facets were found on the periphery of some of the crystals grown along the [100] orientation (space group: Pbnm). Laue back reflection was used to determine orientations of grown crystals and of facets formed at outer surfaces. Dislocation densities ranging between 10(5) and 10(6) cm(-2) were determined by optical microscopy after polishing and chemical etching. By using X-ray powder diffraction it was determined that a thermodynamically favored decomposition of grown single crystals of manganese silicate during cooling after crystal growth did not occur. Concentrations of impurities and the degree of a desired silica excess present in the grown crystals were determined by using the ICP-AES technique. The presence of intended silica-rich precipitates was confirmed by electron microprobe analysis. (C) 2012 Elsevier B.V. All rights reserved.
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页码:89 / 97
页数:9
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