Photoprotected spin Hall effect on graphene with substrate induced Rashba spin-orbit coupling

被引:2
作者
Lopez, Alexander [1 ]
Molina, Rafael A. [2 ]
机构
[1] Escuela Super Politecn Litoral, ESPOL, Dept Fis, Campus Gustavo Galindo Km 30-5,Via Perimetral, Guayaquil, Ecuador
[2] CSIC, Inst Estruct Mat, Serrano 123, Madrid 28006, Spain
关键词
graphene; topological; Floquet; TOPOLOGICAL INSULATOR; FLOQUET-BLOCH; STATES; DISCOVERY; SEMIMETAL; SURFACE;
D O I
10.1088/1361-648X/ab6cc0
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We propose an experimental realization of the spin Hall effect in graphene by illuminating a graphene sheet on top of a substrate with circularly polarized monochromatic light. The substrate induces a controllable Rashba type spin-orbit coupling which breaks the spin-degeneracy of the Dirac cones but it is gapless. The circularly polarized light induces a gap in the spectrum and turns graphene into a Floquet topological insulator with spin dependent edge states. By analyzing the high and intermediate frequency regimes, we find that in both parameter limits, the spin-Chern number can be tuned by the effective coupling strength of the charge particles to the radiation field and determine the condition for the photoinduced topological phase transition.
引用
收藏
页数:9
相关论文
共 69 条
[1]   Spintronics [J].
Bader, S. D. ;
Parkin, S. S. P. .
ANNUAL REVIEW OF CONDENSED MATTER PHYSICS, VOL 1, 2010, 1 :71-88
[2]   Quantum spin Hall effect and topological phase transition in HgTe quantum wells [J].
Bernevig, B. Andrei ;
Hughes, Taylor L. ;
Zhang, Shou-Cheng .
SCIENCE, 2006, 314 (5806) :1757-1761
[3]   Dynamical polarizability of graphene irradiated by circularly polarized ac electric fields [J].
Busl, Maria ;
Platero, Gloria ;
Jauho, Antti-Pekka .
PHYSICAL REVIEW B, 2012, 85 (15)
[4]   OSCILLATORY EFFECTS AND THE MAGNETIC-SUSCEPTIBILITY OF CARRIERS IN INVERSION-LAYERS [J].
BYCHKOV, YA ;
RASHBA, EI .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (33) :6039-6045
[5]   Tuning laser-induced band gaps in graphene [J].
Calvo, Hernan L. ;
Pastawski, Horacio M. ;
Roche, Stephan ;
Foa Torres, Luis E. F. .
APPLIED PHYSICS LETTERS, 2011, 98 (23)
[6]   Floquet topological insulators [J].
Cayssol, Jerome ;
Dora, Balazs ;
Simon, Ferenc ;
Moessner, Roderich .
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2013, 7 (1-2) :101-108
[7]   Evidence for Dirac Fermions in a Honeycomb Lattice Based on Silicon [J].
Chen, Lan ;
Liu, Cheng-Cheng ;
Feng, Baojie ;
He, Xiaoyue ;
Cheng, Peng ;
Ding, Zijing ;
Meng, Sheng ;
Yao, Yugui ;
Wu, Kehui .
PHYSICAL REVIEW LETTERS, 2012, 109 (05)
[8]   Beyond the Floquet theorem: generalized Floquet formalisms and quasienergy methods for atomic and molecular multiphoton processes in intense laser fields [J].
Chu, SI ;
Telnov, DA .
PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS, 2004, 390 (1-2) :1-131
[9]   All-optical materials design of chiral edge modes in transition-metal dichalcogenides [J].
Claassen, Martin ;
Jia, Chunjing ;
Moritz, Brian ;
Devereaux, Thomas P. .
NATURE COMMUNICATIONS, 2016, 7
[10]   Rashba effect in the graphene/Ni(111) system [J].
Dedkov, Yu. S. ;
Fonin, M. ;
Ruediger, U. ;
Laubschat, C. .
PHYSICAL REVIEW LETTERS, 2008, 100 (10)