Sign of Hall coefficient in nearest-neighbor hopping conduction in heavily Al-doped p-type 4H-SiC (vol 59, 051004, 2020)

被引：0
|
作者：
Matsuura, Hideharu [1 ]
Takeshita, Akinobu [1 ]
Hidaka, Atsuki [1 ]
Ji, Shiyang [2 ]
Eto, Kazuma [2 ]
Mitani, Takeshi [2 ]
Kojima, Kazutoshi [2 ]
Kato, Tomohisa [2 ]
Yoshida, Sadafumi [2 ]
Okumura, Hajime [2 ]
机构：
[1] Osaka Electrocommun Univ, Dept Elect & Elect Engn, Osaka 5728530, Japan
[2] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2020年 / 59卷 / 08期
关键词：
D O I：
10.35848/1347-4065/aba37b
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页数：1
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