High-frequency V-doped ZnO/SiC surface acoustic wave devices with enhanced electromechanical coupling coefficient

被引:26
作者
Fu, Sulei [1 ]
Wang, Weibiao [2 ]
Li, Qi [1 ]
Lu, Zengtian [2 ]
Chen, Zhenglin [3 ]
Luo, Jingting [4 ]
Shen, Junyao [1 ]
Wang, Rui [1 ]
Song, Cheng [1 ]
Zeng, Fei [1 ]
Pan, Feng [1 ]
机构
[1] Tsinghua Univ, Sch Mat Sci & Engn, Key Lab Adv Mat MOE, Beijing 100084, Peoples R China
[2] SHOULDER Elect Ltd, Wuxi 214124, Jiangsu, Peoples R China
[3] Nanjing Univ, Sch Elect Sci & Engn, Nanjing 210093, Jiangsu, Peoples R China
[4] Shenzhen Univ, Shenzhen Key Lab Sensor Technol, Coll Phys & Energy, Shenzhen 518060, Peoples R China
关键词
MGXZN1-XO FILMS; QUALITY FACTOR; THIN-FILMS; RESONATORS; SAPPHIRE; MODE; ZINC; MG;
D O I
10.1063/1.5086445
中图分类号
O59 [应用物理学];
学科分类号
摘要
The rapid development of large-volume and high-speed mobile communication systems has increased the demand for high-frequency and wide-band surface acoustic wave (SAW) devices. In this work, ZnO films and V-doped ZnO (V:ZnO) films with (0002) orientation were grown on SiC substrates using a magnetron sputtering method. High-frequency SAW resonators with the resonant frequency ranging from 4 GHz to 6 GHz were fabricated on the above structures. V:ZnO/SiC SAW resonators exhibited a significantly increased electromechanical coupling coefficient (K-2) in the range of 2.80%-5.12%, in a wide normalized thickness range, which is more than a 75% increase compared to that of ZnO-based SAW resonators. Besides, the high quality factor Q ranging from 431 to 593 and an improvement in the figure of merit value were observed for the V:ZnO/SiC SAW resonators operating at 4-6 GHz. Finally, 4.58 GHz SAW filters using V:ZnO films with a larger bandwidth and a lower insertion loss were achieved. This work clearly shows that the ZnO/SiC SAW properties can be improved by V doping, and the V:ZnO/SiC structures have great potential for application in high-frequency and wide-band SAW filters. Published under license by AIP Publishing.
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页数:5
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