Temperature dependence of direct and indirect band gaps of Bi13I2S18 hexagonal rod crystals

被引：8
作者：
Chen, Ya-Han [1 ]
Ho, Ching-Hwa [1 ]
机构：
[1] Natl Taiwan Univ Sci & Technol, Grad Inst Appl Sci & Technol, 43 Sec 4,Keelung Rd, Taipei 106, Taiwan
来源：
MATERIALS CHEMISTRY AND PHYSICS | 2018年 / 206卷
关键词：
Crystal growth; Band gap; 1-eV material; Temperature dependence; ENHANCED THERMOELECTRIC PROPERTIES; BI2S3; PHOTOLUMINESCENCE; THERMOREFLECTANCE; SPECTROSCOPY; ANISOTROPY;
D O I：
10.1016/j.matchemphys.2017.12.002
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Single crystals of Bi13I2S18 have been grown by chemical vapor transport method. The band-edge properties of Bi13I2S18 are evaluated using temperature-dependent optical absorption and thermal modulated reflectance (TR) measurements in the temperature range between 30 and 300 K. Single-crystal X-ray diffraction of different orientations showed structural anisotropy and identified the crystalline phase of the as-grown Bi13I2S18 hexagonal micro pillars. According to transmission and TR measurements, the Bi13I2S18 hexagonal rod is confirmed to be an indirect semiconductor that simultaneously possesses indirect (E-g(ind) at similar to 0.73 eV) and direct (E-g(d) at similar to 1.06 eV) optical gaps. The averaged value of direct and indirect gaps is close to 1 eV that may efficiently absorb the sunlight spectrum for solar energy application. Temperature-energy variation and line-width broadening behavior (TR) of the band-edge transition of Bi13I2S18 are also analyzed and discussed herein. (C) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码：71 / 75
页数：5
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