Elimination of SiC/SiO2 interface states by preoxidation ultraviolet-azone cleaning

被引：120

作者：

Afanas'ev, VV

Stesmans, A

Bassler, M

Pensl, G

Schulz, MJ

Harris, CI

机构：

[1] UNIV ERLANGEN NURNBERG, INST PHYS APPL, D-91058 ERLANGEN, GERMANY

[2] IND MICROELECT CTR, S-16421 KISTA, SWEDEN

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 15期

关键词：

D O I：

10.1063/1.115611

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The preoxidation cleaning of silicon carbide surfaces (3C, 4H, 6H polytypes) by exposing them to ultraviolet radiation and oxygen is shown to produce a significant improvement in the electronic properties of SiC/SiO2 interfaces. It is found that this treatment results in a removal of defect species, otherwise present at the SiC surface after thermal oxidation of SiC. Carbon clusters are proposed as the attacked species responsible for a substantial part of the SiC/SiO2 interface states. (C) 1996 American Institute of Physics.

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页码：2141 / 2143

页数：3

相关论文

共 12 条

[1] THE NECESSITY OF THE WIENER TEST FOR SOME SEMILINEAR ELLIPTIC-EQUATIONS [J].

ADAMS, DR ;

HEARD, A .

INDIANA UNIVERSITY MATHEMATICS JOURNAL, 1992, 41 (01) :109-124

[2] Band offsets and electronic structure of SiC/SiO2, interfaces [J].

Afanas'ev, VV ;

Bassler, M ;

Pensl, G ;

Schulz, MJ ;

vonKamienski, ES .

JOURNAL OF APPLIED PHYSICS, 1996, 79 (06) :3108-3114

[3] ELECTRICAL-PROPERTIES OF THERMAL OXIDE GROWN USING DRY OXIDATION ON P-TYPE 6H-SILICON CARBIDE [J].

ALOK, D ;

MCLARTY, PK ;

BALIGA, BJ .

APPLIED PHYSICS LETTERS, 1994, 65 (17) :2177-2178

[4] ELECTRICAL AND PHYSICOCHEMICAL CHARACTERIZATIONS OF THE SIO2/SIC INTERFACE [J].

BILLON, T ;

BANO, E ;

DICIOCCIO, L ;

OUISSE, T ;

LASSAGNE, P ;

JAUSSAUD, C .

MICROELECTRONIC ENGINEERING, 1995, 28 (1-4) :193-196

[5]

PENSL G, 1995, IN PRESS ICSCRM 95 K

[6] PREPARATION AND PROPERTIES OF AMORPHOUS-CARBON [J].

ROBERTSON, J .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1991, 137 :825-830

[7] CHARACTERIZATION AND OPTIMIZATION OF THE SIO2/SIC METAL-OXIDE-SEMICONDUCTOR INTERFACE [J].

SHENOY, JN ;

CHINDALORE, GL ;

MELLOCH, MR ;

COOPER, JA ;

PALMOUR, JW ;

IRVINE, KG .

JOURNAL OF ELECTRONIC MATERIALS, 1995, 24 (04) :303-309

[8] C-V CHARACTERISTICS OF MOS STRUCTURES FABRICATED OF AL-DOPED P-TYPE 3C-SIC EPILAYERS GROWN ON SI BY CHEMICAL VAPOR-DEPOSITION [J].

SHINOHARA, M ;

YAMANAKA, M ;

MISAWA, S ;

OKUMURA, H ;

YOSHIDA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (02) :240-243

[9] THE FORMATION OF HYDROGEN PASSIVATED SILICON SINGLE-CRYSTAL SURFACES USING ULTRAVIOLET CLEANING AND HF ETCHING [J].

TAKAHAGI, T ;

NAGAI, I ;

ISHITANI, A ;

KURODA, H ;

NAGASAWA, Y .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (07) :3516-3521

[10]

YAMAMOTO T, 1981, JPN J APPL PHYS S202, V20, P185