MR behavior in tunneling junctions with a nonmagnetic metal layer between barrier and electrode

被引：1
|
作者：
Yamanaka, H
Saito, K
Takanashi, K
Fujimori, H
机构：
[1] Read Rite SMI Co, Osaka 6180013, Japan
[2] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan
来源：
IEEE TRANSACTIONS ON MAGNETICS | 1999年 / 35卷 / 05期
关键词：
bias voltage dependence; ferromagnetic tunneling junction; non magnetic metal layer; tunneling magnetoresistance;
D O I：
10.1109/20.801013
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The influence of a nonmagnetic metal (Cu) layer between the barrier and the electrode in ferromagnetic tunneling junctions on magnetoresistance has been investigated. MR decreases with increasing the Cu layer thickness (t(Cu)) however, the variations in MR at 77K with temperature and bias voltage become smaller with increasing t(Cu).
引用
收藏
页码：2883 / 2885
页数：3
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