MR behavior in tunneling junctions with a nonmagnetic metal layer between barrier and electrode

被引：1
|
作者：
Yamanaka, H
Saito, K
Takanashi, K
Fujimori, H
机构：
[1] Read Rite SMI Co, Osaka 6180013, Japan
[2] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan
来源：
IEEE TRANSACTIONS ON MAGNETICS | 1999年 / 35卷 / 05期
关键词：
bias voltage dependence; ferromagnetic tunneling junction; non magnetic metal layer; tunneling magnetoresistance;
D O I：
10.1109/20.801013
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The influence of a nonmagnetic metal (Cu) layer between the barrier and the electrode in ferromagnetic tunneling junctions on magnetoresistance has been investigated. MR decreases with increasing the Cu layer thickness (t(Cu)) however, the variations in MR at 77K with temperature and bias voltage become smaller with increasing t(Cu).
引用
收藏
页码：2883 / 2885
页数：3
相关论文
共 50 条
  • [21] Vertical Organic Phototransistors With Metal/Insulator Strips as the Source Electrode/Barrier Layer
    Cai, Shengliang
    Zhu, Huabiao
    Jiang, Chaoqun
    Wang, Xinyu
    Xu, Sunan
    Lv, Wenli
    Sun, Lei
    Peng, Yingquan
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2022, 34 (15) : 803 - 806
  • [22] Effects of the microstructure of platinum electrode on the oxidation behavior of TiN diffusion barrier layer
    Lee, DS
    Woo, HJ
    Park, DY
    Ha, J
    Hwang, CS
    Yoon, E
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2003, 42 (2A): : 630 - 633
  • [23] In vacuo atomic layer deposition and electron tunneling characterization of ultrathin dielectric films for metal/insulator/metal tunnel junctions
    Wu, Judy Z.
    Acharya, Jagaran
    Goul, Ryan
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2020, 38 (04):
  • [24] Enhanced efficiency in perovskite solar cells by eliminating the electron contact barrier between the metal electrode and electron transport layer
    Tao, Junlei
    Ali, Nasir
    Chen, Kang
    Huai, Zhaoxiang
    Sun, Yansheng
    Fu, Guangsheng
    Kong, Weiguang
    Yang, Shaopeng
    JOURNAL OF MATERIALS CHEMISTRY A, 2019, 7 (03) : 1349 - 1355
  • [25] Alleviation of Schottky barrier heights at TMDs/metal interfaces with a tunneling layer of semiconducting InSe nanoflake
    Xu, Bo
    Yang, Sha
    Li, Yang
    Li, Hui
    Sun, Zhao-Yuan
    Sun, Xue-Yin
    Zhang, Jia
    Qin, Jing-Kai
    Hu, Ping-An
    Zhen, Liang
    Liu, Wei
    Xu, Cheng-Yan
    APPLIED SURFACE SCIENCE, 2023, 636
  • [26] High negative tunneling magnetoresistance in magnetic tunnel junctions with a ferrimagnetic CoFe-Gd electrode and a CoFe interface layer
    Kaiser, C
    Parkin, SSP
    APPLIED PHYSICS LETTERS, 2006, 88 (11)
  • [27] Electron tunneling through molecule-electrode contacts of single alkane molecular junctions: experimental determination and a practical barrier model
    Wang, Kun
    Xu, Bingqian
    PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2016, 18 (14) : 9569 - 9576
  • [28] Interface Dynamic Behavior Between a Carbon Nanotube and Metal Electrode
    Wang, Ming-Sheng
    Golberg, Dmitri
    Bando, Yoshio
    ADVANCED MATERIALS, 2010, 22 (01) : 93 - +
  • [29] TUNNELING IN SELF-CONSISTENT SCHOTTKY-BARRIER OF METAL-SEMICONDUCTOR JUNCTIONS DURING PLASMA REFLECTION OF RADIATION
    GANICHEV, SD
    GLOUKH, KY
    KOTELNIKOV, IN
    MORDOVETS, NA
    SHULMAN, AY
    YAROSHETSKII, ID
    ZHURNAL EKSPERIMENTALNOI I TEORETICHESKOI FIZIKI, 1992, 102 (03): : 907 - 924
  • [30] THEORETICAL-STUDY OF THE INFLUENCE OF QUANTUM SIZE EFFECTS AND TUNNEL-BARRIER STRUCTURE ON THE TUNNELING CURRENT IN METAL-SEMICONDUCTOR-METAL JUNCTIONS
    KIM, G
    ARNOLD, GB
    PHYSICAL REVIEW B, 1988, 38 (05): : 3241 - 3251
12345