Deep-level traps induced dark currents in extended wavelength InxGa1-xAs/InP photodetector

被引：51

作者：

Ji, Xiaoli ^{[1
]}

Liu, Baiqing ^{[1
]}

Xu, Yue ^{[1
]}

Tang, Hengjing ^{[2
]}

Li, Xue ^{[2
]}

Gong, HaiMei ^{[2
]}

Shen, Bo ^{[3
]}

Yang, Xuelin ^{[3
]}

Han, Ping ^{[1
]}

Yan, Feng ^{[1
]}

机构：

[1] Nanjing Univ, Sch Elect Sci & Engn, Nanjing 210093, Jiangsu, Peoples R China

[2] Shanghai Inst Tech Phys, State Key Lab Transducer Technol, Shanghai 200083, Peoples R China

[3] Peking Univ, Dept Phys, Beijing 100871, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2013年 / 114卷 / 22期

关键词：

FE ACCEPTOR LEVEL; INGAAS; LAYERS; BUFFER;

D O I：

10.1063/1.4838041

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The dark current mechanism of extended wavelength InxGa1-xAs photo-detectors is still a debated issue. In this paper, the deep-level transient spectroscopy (DLTS) and dark current characteristics of InxGa1-xAs/InP detectors are investigated. Using trap parameters obtained from DLTS measurement, the device simulations of current-voltage characteristics are carried out by Silvaco Altas. The results reveal that the dark current at the low reverse bias voltage is associated with deep level trap induced trap assisted tunneling and Shockley-Read-Hall generation mechanism. The reduction of the deep level trap concentration in InxGa(1-x)As absorption layer could dramatically suppress the dark current near zero bias in extended wavelength InxGa1-xAs/InP detectors. (C) 2013 AIP Publishing LLC.

引用

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