Threshold voltage shifts in decananometre-gate AlGaN/GaN HEMTs

被引：9

作者：

Endoh, A

Yamashita, Y

Hikosaka, K

Matsui, T

Hiyamizu, S

Mimura, T

机构：

[1] Fujitsu Labs Ltd, Kanagawa 2430197, Japan

[2] Natl Inst Informat & Commun Technol, Tokyo 1848795, Japan

[3] Osaka Univ, Grad Sch Engn Sci, Osaka 5608531, Japan

来源：

ELECTRONICS LETTERS | 2006年 / 42卷 / 08期

关键词：

D O I：

10.1049/el:20060513

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Decananometre-T-shaped-Ni/Pt/Au-gate AlGaN/GaN HEMTs on sapphire substrates are fabricated and their DC characteristics measured. The negative shifts of threshold voltages occur below 5-6 of channel aspect ratio L-g/d, where L-g is the gate length and d is the AlGaN barrier layer thickness. This is a similar trend as observed in AlGaAs/GaAs HEMTs. The negative threshold voltage shifts are enhanced with increasing d, which results from the increase of the two-dimensional electron gas thickness.

引用

页码：490 / 492

页数：3

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