Bonds, bands, and band gaps in tetrahedrally bonded ternary compounds: The role of group V lone pairs

被引:28
作者
Do, Dat T. [1 ]
Mahanti, S. D. [1 ]
机构
[1] Michigan State Univ, Dept Phys & Astron, E Lansing, MI 48824 USA
关键词
Semiconductors; Ab initio calculation; Electronic structure; TOTAL-ENERGY CALCULATIONS; CRYSTAL-STRUCTURE; WAVE; ARRANGEMENT; SPECTRA; LDA+U; ATOMS;
D O I
10.1016/j.jpcs.2013.12.004
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
An interesting class of tetrahedrally coordinated ternary compounds has attracted considerable interest because of their potential as good thermoelectrics. These compounds, denoted as 13-V-V14, contain three monovalent-I (Cu, Ag), one nominally pentavalent-V (P, As, Sb, Bi), and four hexavalent-VI (S, Se, Te) atoms; and can be visualized as ternary derivatives of the II-VI zincblende or wurtzite semiconductors, obtained by starting from four unit cells of (II-VI) and replacing four type II atoms by three type land one type V atoms. We find that nominally pentavalent-V atoms are effectively trivalent and their lone (ns2) pairs play an active role in opening up a gap. The lowest conduction band is a strongly hybridized antibonding combination of the lone pair and chalcogen (VI) p-states. The magnitude of the gap is sensitive to the nature of the exchange interaction (local vs non-local) and the V-VI distance. We also find that the electronic structure near the gap can be reproduced extremely well within a local theory if one can manipulate the position of the filled d bands of Cu and Ag by an effectively large U. (C) 2013 Elsevier Ltd. All rights reserved.
引用
收藏
页码:477 / 485
页数:9
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