Ceramic Substrates for High-temperature Electronic Integration

被引：49

作者：

Chasserio, N. ^{[1
]}

Guillemet-Fritsch, S. ^{[1
]}

Lebey, T. ^{[2
]}

Dagdag, S. ^{[3
]}

机构：

[1] CIRIMAT, F-31077 Toulouse 04, France

[2] Univ Toulouse 3, Lab LAPLACE, F-31062 Toulouse 9, France

[3] ALSTOM Transport, Power Elect Associated Res Lab, F-65600 Semeac, France

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2009年 / 38卷 / 01期

关键词：

High-temperature electronics; passive component; system integration; packaging; ceramic substrate; THERMAL-CONDUCTIVITY;

D O I：

10.1007/s11664-008-0571-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

One of the most attractive ways to increase power handling capacity in power modules is to increase the operating temperature using wide-band-gap semiconductors. Ceramics are ideal candidates for use as substrates in high-power high-temperature electronic devices. The present article aims to determine the most suitable ceramic material for this application.

引用

页码：164 / 174

页数：11

共 12 条

[1]

CALLISTER WD, 2003, SCI GENIE MATERIAUX

[2]

DAGDAG S, 2006, IEEE INT C ELECT MAT, V8, P1

[3] AN OVERVIEW OF HIGH-TEMPERATURE ELECTRONIC DEVICE TECHNOLOGIES AND POTENTIAL APPLICATIONS [J].

DREIKE, PL ;

FLEETWOOD, DM ;

KING, DB ;

SPRAUER, DC ;

ZIPPERIAN, TE .

IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY PART A, 1994, 17 (04) :594-609

[4] SINTERING AND CHARACTERIZATION OF FULLY DENSE ALUMINUM NITRIDE CERAMICS [J].

HIRANO, M ;

KATO, K ;

ISOBE, T ;

HIRANO, T .

JOURNAL OF MATERIALS SCIENCE, 1993, 28 (17) :4725-4730

[5] THERMAL-CONDUCTIVITY IMPROVEMENT OF YAG ADDED ALN CERAMICS IN THE GRAIN-BOUNDARY ELIMINATION PROCESS [J].

KASORI, M ;

UENO, F .

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 1995, 15 (05) :435-443

[6] Reliability aspects of high temperature power MOSFETs [J].

Manca, JV ;

Wondrak, W ;

Schaper, W ;

Croes, K ;

De Ceuninck, W ;

Dieval, B ;

Hartnagel, HL ;

D'Olieslaeger, M ;

De Schepper, L .

MICROELECTRONICS RELIABILITY, 2000, 40 (8-10) :1679-1682

[7]

MCCLUSKEYETAL P, 1998, ADV MICROELECTRONICS, V25, P19

[8]

OKAMOTO M, 1989, J CERAM SOC JPN, V97, P1486

[9]

Pecht M., 1992, Quality and Reliability Engineering International, V8, P167, DOI 10.1002/qre.4680080304

[10]

Ueno F, 2000, ELECTRIC REFRACTORY MATERIALS, P691

← 1 2 →