SEU ground and flight data in static random access memories

被引：4

作者：

Liu, J ^{[1
]}

Duan, JL

Hou, MD

Sun, YM

Yao, HJ

Mo, D

Zhang, QX

Wang, ZG

Jin, YF

Cai, JR

Ye, ZH

Han, JW

Lin, YL

Huang, Z

机构：

[1] Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China

[2] Chinese Acad Sci, Ctr Space Sci & Apply Res, Beijing 100080, Peoples R China

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2006年 / 245卷 / 01期

关键词：

single event effects; heavy ion simulation; microcircuit;

D O I：

10.1016/j.nimb.2005.11.125

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

This paper presents the vulnerabilities of single event effects (SEEs) simulated by heavy ions on ground and observed oil SJ-5 research satellite in space for static random access memories (SRAMs). A single event upset (SEU) prediction code has been used to estimate the proton-induced upset rates based oil the ground test curve of SEU cross-section versus heavy ion linear energy transfer (LET). The result agrees with that of the flight data. (c) 2005 Published by Elsevier B.V.

引用

页码：342 / 345

页数：4

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