Numerical simulation of the generation of gain switched laser pulses

被引：1

作者：

Biernat, A ^{[1
]}

Kompa, G ^{[1
]}

机构：

[1] Univ Kassel, Fachgebiet Hochfrequenztech, D-34121 Kassel, Germany

来源：

OPTICAL AND QUANTUM ELECTRONICS | 1999年 / 31卷 / 9-10期

关键词：

device modeling; gain switching; high power; laser radar; picosecond pulses; semiconductor laser;

D O I：

10.1023/A:1006912814057

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Gain switched laser pulses with FWHM of 32 ps having an optical peak power exceeding 400 W are generated using low cost single heterostructure (SH) Fabry-Perot laser diodes. To examine and to optimize this effect in detail, a thorough physical device simulation is done. Maxwell's equations together with a simplified version of the Boltzmann transport equation (BTE) and various parameters like carrier recombination and material gain, form a coupled set of nonlinear, inhomogeneous partial differential equations, that are discretized using the finite difference scheme and solved selfconsistently.

引用

页码：981 / 995

页数：15

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