Numerical simulation of the generation of gain switched laser pulses

被引：1
|
作者：
Biernat, A [1 ]
Kompa, G [1 ]
机构：
[1] Univ Kassel, Fachgebiet Hochfrequenztech, D-34121 Kassel, Germany
来源：
OPTICAL AND QUANTUM ELECTRONICS | 1999年 / 31卷 / 9-10期
关键词：
device modeling; gain switching; high power; laser radar; picosecond pulses; semiconductor laser;
D O I：
10.1023/A:1006912814057
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Gain switched laser pulses with FWHM of 32 ps having an optical peak power exceeding 400 W are generated using low cost single heterostructure (SH) Fabry-Perot laser diodes. To examine and to optimize this effect in detail, a thorough physical device simulation is done. Maxwell's equations together with a simplified version of the Boltzmann transport equation (BTE) and various parameters like carrier recombination and material gain, form a coupled set of nonlinear, inhomogeneous partial differential equations, that are discretized using the finite difference scheme and solved selfconsistently.
引用
收藏
页码：981 / 995
页数：15
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