Interband nonlinear optical generation in presence of intersubband light in asymmetric quantum wells

被引:8
作者
Neogi, A
Takahashi, Y
Kawaguchi, H
机构
[1] Faculty of Engineering, Yamagata University, Yonezawa 992
[2] R.D. University, Jabalpur
[3] Vikram University, Ujjain
[4] D.A. University, Indore
[5] Indian Physics Association, Japan Society of Applied Physics
[6] Tohoku University, Sendai
[7] IBM Tokyo Research Lab., Tokyo
[8] Dept. of Elec. and Info. Engineering, Yamagata University, Yonezawa
[9] Physical Society of Japan, Japan Society of Applied Physics
[10] Niigata University, Niigata
[11] NTT Elec. Communication Laboratories, Musashino, Tokyo
[12] Faculty of Engineering, Yamagata University, Yonezawa-city
[13] Cambridge University, Cambridge
[14] Inst. Electronics, Info. Commun. E., Japan Society of Applied Physics
关键词
D O I
10.1109/3.488845
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The interband sum frequency generation process due to three-wave interaction of interband and intersubband coupling lights has been investigated in a semiconductor quantum well using the perturbational density matrix approach. The origin of the nonlinear process lies in the second-order susceptibility chi(c2-h1)((2)) arising due to the optical transition between the second conduction subband and the first heavy hole state. Both the sign and the magnitude of the second-order susceptibility of the well may be controlled by the carrier density level and the frequency of the intersubband field.
引用
收藏
页码:701 / 711
页数:11
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