Stabilization of the hole conductivity of Zn1-xLixOy thin films fabricated by pulsed laser deposition

被引：4
作者：
Kuz'mina, A. S. [1 ]
Lotin, A. [2 ]
Strokin, N. A. [1 ]
Kuz'min, M. P. [1 ]
Kazantsev, A., V [1 ]
机构：
[1] Irkutsk Natl Res Tech Univ, Irkutsk 664074, Russia
[2] Russian Acad Sci, Inst Laser & Informat Technol, Branch Fed Sci, Res Ctr Crystallog & Photon, Shatura 140700, Russia
来源：
MATERIALS RESEARCH EXPRESS | 2019年 / 6卷 / 08期
关键词：
hole conduction; thin films; zinc oxide; pulsed laser deposition; annealing; acceptor centers; oxygen vacancies; P-TYPE BEHAVIOR; ELECTRICAL-PROPERTIES; ZNO;
D O I：
10.1088/2053-1591/ab1c29
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The work discusses the results of structural and electrical measurements of Zn1-xLixOy thin films (x = 0-0.06) fabricated by pulsed laser deposition under various conditions. It has been established that all Zn1-xLixOy thin films are characterized by the presence of a single ZnO phase which possesses wurtzite structure (P6(3)/mc) oriented along the (001) direction. It has been determined that the films not subjected to annealing in the oxygen atmosphere demonstrate electronic conductivity due to the self-compensation effect. The increase in the electron concentration is induced by lower pressure observed during the growth process. For the first time, a technique to synthesize Zn1-xLixOy thin films (x = 0-0.06) of p-type conductivity with a relatively high concentration of charge carriers (10(18)cm(-3)) stable over time has been developed. The concentration of oxygen vacancies in the V-O-Li-i complexes (acceptor centers) is assumed to be an important factor determining the p-type conductivity. The films under investigation are of interest for designing semiconductor spintronics devices.
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页数：8
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