Analysis of characteristics of InGaAs/GaAs microdisk lasers bonded onto silicon board

被引：0

作者：

Dragunova, A. S. ^{[1
]}

Kryzhanovskaya, N. V. ^{[1
,2
]}

Moiseev, E. I. ^{[1
]}

Zubov, F. I. ^{[1
,2
]}

Kalyuzhnyy, N. A. ^{[3
]}

Mintairov, S. A. ^{[3
]}

Nadtochiy, A. M. ^{[1
,3
]}

Guseva, Yu. A. ^{[3
]}

Kulagina, M. M. ^{[3
]}

Zhukov, A. E. ^{[1
]}

机构：

[1] HSE Univ, St Petersburg, Russia

[2] Alferov Univ, St Petersburg, Russia

[3] Ioffe Inst, St Petersburg, Russia

来源：

ST PETERSBURG POLYTECHNIC UNIVERSITY JOURNAL-PHYSICS AND MATHEMATICS | 2022年 / 15卷 / 03期

基金：

俄罗斯科学基金会;

关键词：

hybrid integration; microlaser; quantum well dots; energy-to-data ratio; thermal resistance;

D O I：

10.18721/JPM.153.331

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

In this work we study characteristics of the III-V microdisk lasers bonded onto silicon board. The bonding of microdisk lasers to the silicon substrate reduces their thermal resistance. Here we show improvement in output power, lasing threshold, dynamic characteristics and energy consumption in microdisk lasers with diameters of 31 mu m and 19 mu m by comparison of the characteristics obtained before and after bonding. Also, estimation of energy-to-data ratio was performed at 13 degrees C and 20 degrees C for a 19 mu m microdisk lasers after bonding.

引用

页码：163 / 166

页数：4

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