Reliability of Polycrystalline Silicon Thin-Film Transistors on the glass substrate

被引：1

作者：

Choi, Sung-Hwan ^{[1
]}

Han, Min-Koo ^{[1
]}

机构：

[1] Seoul Natl Univ, Sch Elect Engn & Comp Sci, Seoul 151742, South Korea

来源：

THIN FILM TRANSISTORS 10 (TFT 10) | 2010年 / 33卷 / 05期

关键词：

NH3 PLASMA PASSIVATION; POLYSILICON; HYDROGENATION; TFT;

D O I：

10.1149/1.3481217

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We have investigated electrical characteristics of laser-crystallized polycrystalline silicon thin film transistors (poly-Si TFTs) under various stresses such as bias, temperature, light illumination. The threshold voltage of short channel TFT (L-CH=1.5 mu m) was significantly shifted to negative direction due to bias temperature stress (Delta V-TH = -3.75V) compared with that of long channel TFT (Delta V-TH = -0.32V) at 100 degrees C. We have also investigated the effects of light illumination on the laser-crystallized poly-Si TFT. In order to improve the reliability of laser-crystallized poly-Si TFT, a novel multiple-channel structure was proposed and fabricated without any additional processes. In addition, in order to enhance the electric characteristics and stability of alternating magnetic-field-enhanced rapid thermal annealing (AMFERTA) poly-Si TFTs, we have employed the NH3 plasma pretreatment prior to crystallization process. The NH3 plasma pretreatment process could effectively improve the reliability of AMFERTA poly-Si TFTs.

引用

页码：41 / 49

页数：9

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