Reliability of Polycrystalline Silicon Thin-Film Transistors on the glass substrate

被引：1
|
作者：
Choi, Sung-Hwan [1 ]
Han, Min-Koo [1 ]
机构：
[1] Seoul Natl Univ, Sch Elect Engn & Comp Sci, Seoul 151742, South Korea
来源：
THIN FILM TRANSISTORS 10 (TFT 10) | 2010年 / 33卷 / 05期
关键词：
NH3 PLASMA PASSIVATION; POLYSILICON; HYDROGENATION; TFT;
D O I：
10.1149/1.3481217
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
We have investigated electrical characteristics of laser-crystallized polycrystalline silicon thin film transistors (poly-Si TFTs) under various stresses such as bias, temperature, light illumination. The threshold voltage of short channel TFT (L-CH=1.5 mu m) was significantly shifted to negative direction due to bias temperature stress (Delta V-TH = -3.75V) compared with that of long channel TFT (Delta V-TH = -0.32V) at 100 degrees C. We have also investigated the effects of light illumination on the laser-crystallized poly-Si TFT. In order to improve the reliability of laser-crystallized poly-Si TFT, a novel multiple-channel structure was proposed and fabricated without any additional processes. In addition, in order to enhance the electric characteristics and stability of alternating magnetic-field-enhanced rapid thermal annealing (AMFERTA) poly-Si TFTs, we have employed the NH3 plasma pretreatment prior to crystallization process. The NH3 plasma pretreatment process could effectively improve the reliability of AMFERTA poly-Si TFTs.
引用
收藏
页码：41 / 49
页数：9
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