On the origin of white light emission from nanostructured silicon carbonitride thin films

被引：10

作者：

Khatami, Zahra ^{[1
]}

Wilson, Patrick R. J.

Wojcik, Jacek

Mascher, Peter

机构：

[1] McMaster Univ, Dept Engn Phys, Hamilton, ON L8S 4L7, Canada

来源：

JOURNAL OF LUMINESCENCE | 2018年 / 196卷

基金：

加拿大自然科学与工程研究理事会;

关键词：

EMITTING-DIODES; NITRIDE FILMS; QUANTUM DOTS; SICN FILMS; PHOTOLUMINESCENCE; PHOTONICS;

D O I：

10.1016/j.jlumin.2017.12.011

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The effects of thermal annealing on the visible luminescence of hydrogenated silicon carbonitride (SiCxNy:Hz) thin films were investigated. Thin films of a-SiC1.2N0.7:H-1.4 were grown using electron cyclotron resonance plasma enhanced chemical vapor deposition and subsequently were annealed between 400 and 1200 degrees C for 1 h in nitrogen gas. The samples exhibited a broad luminescence band, covering the visible range with two dominant peaks at similar to 470 and 550 nm, which appeared "white" to the naked eye. This white light emission could be deconvoluted into four photoluminescence (PL) bands. To understand the origin of PL from this complex material, two fairly well-studied submatrices, SiC:H-1.3 and SiN1.3:H-0.3, were also investigated. Our findings showed that the intensity of the PL emission of a-SiC(1.2)N0(.7):H-1.4 was higher than that of the binary matrices and was achieved at an optimized annealing temperature of 500 degrees C. Carbon-related silicon defect centers were suggested as the sources of the luminescence of the a-SiCxNy: Hz thin films. The observed visible emission was strongly correlated with different Si-C bonding configurations.

引用

页码：504 / 510

页数：7

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