Solid-state growth kinetics of Ni3Sn4 at the Sn-3.5Ag solder/Ni interface -: art. no. 123527

被引:51
作者
Alam, MO [1 ]
Chan, YC [1 ]
机构
[1] City Univ Hong Kong, Dept Elect Engn, Kowloon, Hong Kong, Peoples R China
关键词
D O I
10.1063/1.2149487
中图分类号
O59 [应用物理学];
学科分类号
摘要
Systematic experimental work was carried out to understand the growth kinetics of Ni3Sn4 at the Sn-3.5Ag solder/Ni interface. Sn-3.5%Ag solder was reflowed over Ni metallization at 240 degrees C for 0.5 min and solid-state aging was carried out at 150-200 degrees C, for different times ranging from 0 to 400 h. Cross-sectional studies of interfaces have been conducted by scanning electron microscopy and energy dispersive x ray. The growth exponent n for Ni3Sn4 was found to be about 0.5, which indicates that it grows by a diffusion-controlled process even at a very high temperature near to the melting point of the SnAg solder. The activation energy for the growth of Ni3Sn4 was determined to be 16 kJ/mol. (c) 2005 American Institute of Physics.
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页数:4
相关论文
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