Distribution of zinc, resistivity, and photosensitivity in a vertical Bridgman grown Cd1-xZnxTe ingot

被引：18
作者：
Babentsov, V. [2 ]
Franc, J. [1 ]
Fauler, A. [3 ]
Fiederle, M. [3 ]
James, R. B. [4 ]
机构：
[1] Charles Univ Prague, Inst Phys, Fac Math & Phys, CZ-12116 Prague, Czech Republic
[2] Inst Semicond Phys, UA-03028 Kiev, Ukraine
[3] Mat Forschungszentrum, D-79104 Freiburg, Germany
[4] Brookhaven Natl Lab, Nonproliferat & Natl Secur Dept, Upton, NY 11973 USA
来源：
JOURNAL OF CRYSTAL GROWTH | 2008年 / 310卷 / 15期
关键词：
point defects; Bridgman technique; semiconducting II-VI materials;
D O I：
10.1016/j.jcrysgro.2008.05.017
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We present the results of a comprehensive study of distribution of zinc, resistivity, and photosensitivity in a Cd1-xZnxTe ingot grown by the vertical Bridgman method. We used several complementary methods, viz., glow discharge mass spectroscopy, photoluminescence, resistivity-, and photosensitivity-mapping, along with photo-induced current transient spectroscopy to characterize the material. We identified electronic levels in the bandgap responsible for compensation, recombination, and photosensitivity. (c) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：3482 / 3487
页数：6
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