Controlled Coupling and Occupation of Silicon Atomic Quantum Dots at Room Temperature

被引：187

作者：

Haider, M. Baseer ^{[1
,2
]}

Pitters, Jason L. ^{[1
]}

DiLabio, Gino A. ^{[1
]}

Livadaru, Lucian ^{[1
,2
]}

Mutus, Josh Y. ^{[1
,2
]}

Wolkow, Robert A. ^{[1
,2
]}

机构：

[1] Natl Res Council Canada, Natl Inst Nanotechnol, Edmonton, AB T6G 2M9, Canada

[2] Univ Alberta, Dept Phys, Edmonton, AB T6G 2G7, Canada

来源：

PHYSICAL REVIEW LETTERS | 2009年 / 102卷 / 04期

基金：

加拿大自然科学与工程研究理事会;

关键词：

HYDROGEN; DEFECTS; CELL;

D O I：

10.1103/PhysRevLett.102.046805

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

It is demonstrated that the silicon atom dangling bond (DB) state serves as a quantum dot. Coulomb repulsion causes DBs separated by less than or similar to 2 nm to exhibit reduced localized charge, which enables electron tunnel coupling of DBs. Scanning tunneling microscopy measurements and theoretical modeling reveal that fabrication geometry of multi-DB assemblies determines net occupation and tunnel coupling strength among dots. Electron occupation of DB assemblies can be controlled at room temperature. Electrostatic control over charge distribution within assemblies is demonstrated.

引用

页数：4

共 25 条

[1]

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