Improving the Morphological and Optical Properties of Sputtered Indium Tin Oxide Thin Films by Adopting Ultralow-Pressure Sputtering

被引：27
作者：
Huh, Myung Soo [1 ,2 ,3 ]
Yang, Bong Seop [1 ,2 ]
Song, Jaewon [1 ,2 ]
Heo, Jaeyeong [1 ,2 ]
Won, Seok-Jun [1 ,2 ]
Jeong, Jae Kyeong [4 ]
Hwang, Cheol Seong [1 ,2 ]
Kim, Hyeong Joon [1 ,2 ]
机构：
[1] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South Korea
[2] Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 151744, South Korea
[3] Samsung SDI Co Ltd, Core Technol Lab, Gyeonggi Do 442391, South Korea
[4] Samsung SDI Co Ltd, Corp Res & Dev Ctr, Gyeonggi Do 442391, South Korea
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2009年 / 156卷 / 01期
关键词：
absorption coefficients; annealing; atomic force microscopy; display devices; electrical resistivity; Hall mobility; indium compounds; semiconductor thin films; sputter deposition; surface morphology; surface roughness; wide band gap semiconductors; ELECTRICAL-PROPERTIES; STRUCTURAL-PROPERTIES; HEAT-TREATMENT; ITO FILMS; GAS; CRYSTALLIZATION; MICROSTRUCTURE; RESISTIVITY; STRESS;
D O I：
10.1149/1.3005562
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
The morphological and optical properties of indium tin oxide (ITO) thin films deposited by an ultralow-pressure dc magnetron sputtering (ULPS) method followed by postannealing treatment at 250 degrees C are reported. The surface roughness of the film (R-rms: 0.5 nm) deposited using ULPS was about 5 times lower than that of the film (R-rms: 2.7 nm) sputtered using a pressure of 6.7x10(-1) Pa. ITO thin films with a low resistivity of 3.7x10(-4) Omega cm were also achieved using a continuous two-step deposition process, in which the initial layer was deposited using ULPS and then the final layer was deposited with a SP of 6.7x10(-1) Pa, without the use of any other additional steps. Both the ULPS and continuous two-step deposition methods were found to be effective for producing ITO thin films with enhanced morphologies that make them suitable for use in display devices.
引用
收藏
页码：J6 / J11
页数：6
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