InAs self-assembled quantum-dot lasers grown on (100) InP

被引：50
作者：
Allen, CN [1 ]
Poole, PJ
Marshall, P
Fraser, J
Raymond, S
Fafard, S
机构：
[1] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada
[2] Univ Ottawa, Dept Phys, Ottawa, ON K1N 6N5, Canada
来源：
APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 19期
关键词：
D O I：
10.1063/1.1479200
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Five stacked layers of InAs quantum dots (QDs) embedded in quaternary InGaAsP are grown on (100) InP substrate to form a laser diode. The QD ensemble has a density of 1.5x10(10) cm(-2) and emits light at similar to1.6 mum at 77 K. Lasing wavelength and threshold current density can be shifted by changing the cavity length of the laser diode and the latter reaches a value as low as 49 A/cm2 at 77 K for a gate size of 2000 mumx150 mum. Temperature dependence of the threshold current is observed implying the presence of thermionic emission increasing with temperature. (C) 2002 American Institute of Physics.
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页码：3629 / 3631
页数：3
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