Thermal stability of graphene in inert atmosphere at high temperature

被引：68

作者：

Liu, Fu ^{[1
]}

Wang, Mingjie ^{[1
]}

Chen, Yao ^{[1
]}

Gao, Jianmin ^{[1
]}

机构：

[1] Beijing Forestry Univ, Key Lab Wooden Mat Sci & Applicat, MOE, POB 100083, Beijing, Peoples R China

来源：

JOURNAL OF SOLID STATE CHEMISTRY | 2019年 / 276卷

基金：

中国国家自然科学基金;

关键词：

Graphene; Inert atmosphere; High temperature; Stability; Defects; MECHANICAL-PROPERTIES; GRAPHITE; DEFECTS;

D O I：

10.1016/j.jssc.2019.04.008

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

To investigate the thermal stability of graphene during sintering process of ceramic, the effect of temperature on stability of single-layer graphene (SLG) in argon atmosphere was studied. The Raman D-band/G-band intensity ratio(I-D/I-G) and the blue shifts of G mode showed that, the graphene defect density gradually increased with the increase in heat treatment temperature (HTT). There was limited damage in the graphene when treated temperature lower than 800 degrees C. The causes of the defects were discussed. The defect types were mainly on-set defects. Boundary defects were detected when the temperature reached above 800 degrees C. Atom Force Microscope (AFM) results showed that the defects gradually extended from the boundary and holes in the layer to the edge and ultimately led to isolated graphene islands. The experiment results could be useful to study the changes and developing the holistic performance of graphene in high temperature sintering process.

引用

页码：100 / 103

页数：4

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