N-channel polysilicon thin film transistors as gamma-ray detectors

被引：5

作者：

Jelenkovic, Emil V. ^{[1
]}

Kovacevic, Milan S. ^{[2
]}

Stupar, Dragan Z. ^{[3
]}

Bajic, Jovan S. ^{[3
]}

Slankamenac, Milos P. ^{[3
]}

Kovacevic, Milojko ^{[4
]}

To, Suet ^{[1
]}

机构：

[1] Hong Kong Polytech Univ, Dept Ind & Syst Engn, State Key Lab Ultraprecis Machining Technol, Hong Kong, Hong Kong, Peoples R China

[2] Univ Kragujevac, Fac Sci, Dept Phys, Kragujevac, Serbia

[3] Univ Novi Sad, Fac Tech Sci, Novi Sad 21000, Serbia

[4] Inst Nucl Sci Vinca, Belgrade, Serbia

来源：

MEASUREMENT SCIENCE AND TECHNOLOGY | 2013年 / 24卷 / 10期

关键词：

thin film transistors; threshold voltage; drain current; gamma-ray detectors; POLYCRYSTALLINE SILICON; IRRADIATION; OXIDE; TEMPERATURE; STABILITY;

D O I：

10.1088/0957-0233/24/10/105103

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

N-type thin film transistors (TFTs) fabricated with fluorinated and hydrogenated polysilicon were exposed to gamma radiation to a cumulative dose up to 1200 Gy(Si). During irradiation, the gate electrode was biased with a positive voltage up to 4.8 V. The effect of irradiation on the electrical characteristics of the devices was monitored after the irradiation steps and in a prolonged period after irradiation. The main monitoring parameter was the threshold voltage which was found to have linear dependence on irradiation dose. This, together with obtained low fading, suggests that thin transistors have potential as radiation dosimeters.

引用

页数：5

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