Optical and electrical properties of ZnO thin films doped with Al, V and Nb

被引：7

作者：

Angelov, Orlin ^{[1
]}

Lovchinov, Konstantin ^{[1
]}

Dimova-Malinovska, Doriana ^{[1
]}

机构：

[1] Bulgarian Acad Sci, Cent Lab Solar Energy & New Energy Sources, BU-1784 Sofia, Bulgaria

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 4 | 2013年 / 10卷 / 04期

关键词：

ZnO; r.f. magnetron sputtering; transparent conductive oxide; electrical and optical properties;

D O I：

10.1002/pssc.201200559

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This study addresses the optical and electrical properties of ZnO thin films doped with Al, V and Nb (ZnO:Al, ZnO:V and ZnO:Nb, respectively) deposited by r.f. magnetron sputtering in Ar atmosphere. The films are deposited on glass substrates without heating and heated at 100 degrees C, 150 degrees C and 275 degrees C. The optical spectra of transmittance and reflectance are measured and the optical band gap of the films is determined. The different films have band gap values in the range of 3.37-3.57 eV. The films have about 90% transmittance and their resistivity is in the range of 8.5-2.0 mO. cm. The influence of doping elements on the optical and electrical characteristics of the obtained thin films is discussed. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：709 / 712

页数：4

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