New materials for radiation hard semiconductor dectectors

被引:172
作者
Sellin, PJ [1 ]
Vaitkus, J
机构
[1] Univ Surrey, Dept Phys, Guildford GU2 7XH, Surrey, England
[2] Vilnius Univ, Inst Mat Sci & Appl Res, Vilnius, Lithuania
关键词
radiation hard semiconductor detectors; silicon carbide; gallium nitride; amorphous silicon;
D O I
10.1016/j.nima.2005.10.128
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
We present a review of the current status of research into new semiconductor materials for use as particle tracking detectors in very high radiation environments. This work is carried out within the framework of the CERN RD50 collaboration., which is investigating detector technologies suitable for operation at the proposed super-LHC facility (SLHC). Tracking- detectors operating at the SLHC in this environment will have to be capable of withstanding radiation levels arising from a luminosity of 1035 cm(-2)s(-1) which will present severe challenges to current tracking detector technologies. The "new materials" activity within RD50 is investigating the performance of various semiconductor materials that potentially offer radiation hard alternatives to silicon devices. The main contenders in this study are silicon carbide, gallium nitride and amorphous silicon. In this paper we review the current status of these materials, in terms of material quality, commercial availability, charge transport properties, and radiation hardness studies. Whilst these materials currently show considerable promise for use as radiation hard tracking detectors, their ultimate success will depend on the continued improvement of the availability of high quality material. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:479 / 489
页数:11
相关论文
共 88 条
[1]   Status of the R&D activity on diamond particle detectors [J].
Adam, W ;
Bellini, B ;
Berdermann, E ;
Bergonzo, P ;
de Boer, W ;
Bogani, F ;
Borchi, E ;
Brambilla, A ;
Bruzzi, M ;
Colledani, C ;
Conway, J ;
D'Angelo, P ;
Dabrowski, W ;
Delpierre, P ;
Doroshenko, J ;
Dulinski, W ;
van Eijk, B ;
Fallou, A ;
Fischer, P ;
Fizzotti, F ;
Furetta, C ;
Gan, KK ;
Ghodbane, N ;
Grigoriev, E ;
Hallewell, G ;
Han, S ;
Hartjes, F ;
Hrubec, J ;
Husson, D ;
Kagan, H ;
Kaplon, J ;
Karl, C ;
Kass, R ;
Keil, M ;
Knöpfle, KT ;
Koeth, T ;
Krammer, M ;
Logiudice, A ;
Lu, R ;
mac Lynne, L ;
Manfredotti, C ;
Marshall, RD ;
Meier, D ;
Menichelli, D ;
Meuser, S ;
Mishina, M ;
Moroni, L ;
Noomen, J ;
Oh, A ;
Perera, L .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2003, 511 (1-2) :124-131
[2]   Ionizing-radiation detectors based on GaAs with deep centers [J].
Aizenshtadt, GI ;
Kanaev, VG ;
Khan, AV ;
Khludkov, SS ;
Koretskaya, OB ;
Potapov, AI ;
Okaevich, LS ;
Tyazhev, AV ;
Tolbanov, OP .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2000, 448 (1-2) :188-191
[3]  
ALVAREZ F, 1995, SOLID STATE PHENOM, V44, P3
[4]   A new concept of monolithic silicon pixel detectors: hydrogenated amorphous silicon on ASIC [J].
Anelli, G ;
Commichau, SC ;
Despeisse, M ;
Dissertori, G ;
Jarron, P ;
Miazza, C ;
Moraes, D ;
Shah, A ;
Viertel, GM ;
Wyrsch, N .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2004, 518 (1-2) :366-372
[5]  
Augustine G, 1997, PHYS STATUS SOLIDI B, V202, P137, DOI 10.1002/1521-3951(199707)202:1<137::AID-PSSB137>3.0.CO
[6]  
2-Y
[7]   GROWTH OF LARGE SIC SINGLE-CRYSTALS [J].
BARRETT, DL ;
MCHUGH, JP ;
HOBGOOD, HM ;
HOPKINS, RH ;
HOPKINS, RH ;
MCMULLIN, PG ;
CLARKE, RC ;
CHOYKE, WJ .
JOURNAL OF CRYSTAL GROWTH, 1993, 128 (1-4) :358-362
[8]   Gallium arsenide pixel detectors [J].
Bates, R ;
Campbell, M ;
Cantatore, E ;
D'Auria, S ;
DaVia, C ;
del Papa, C ;
Heijne, EM ;
Middelkamp, P ;
O'Shea, V ;
Raine, C ;
Ropotar, I ;
Scharfetter, L ;
Smith, K ;
Snoeys, W .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1998, 410 (01) :6-11
[9]   Silicon carbide for high resolution X-ray detectors operating up to 100°C [J].
Bertuccio, G ;
Casiraghi, R ;
Cetronio, A ;
Lanzieri, C ;
Nava, F .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2004, 522 (03) :413-419
[10]   Noise analysis of gallium arsenide pixel x-ray detectors coupled to ultra-low noise electronics [J].
Bertuccio, G ;
Casiraghi, R ;
Maiocchi, D ;
Owens, A ;
Bavdaz, M ;
Peacock, A ;
Andersson, H ;
Nenonen, S .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2003, 50 (03) :723-728