Optical properties of InN films grown by pressurized-reactor metalorganic vapor phase epitaxy

被引：11

作者：

Zhang, Yuantao ^{[1
,2
]}

Kimura, Takeshi ^{[1
]}

Prasertusk, Kiattiwut ^{[1
]}

Iwabuchi, Takuya ^{[1
]}

Kumar, Suresh ^{[1
]}

Liu, Yuhuai ^{[1
]}

Katayama, Ryuji ^{[1
]}

Matsuoka, Takashi ^{[1
]}

机构：

[1] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

[2] Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China

来源：

THIN SOLID FILMS | 2013年 / 536卷

基金：

日本学术振兴会; 中国国家自然科学基金;

关键词：

Indium nitride; Thin films; Optical properties; Metalorganic vapor phase epitaxy; FUNDAMENTAL-BAND GAP; TEMPERATURES; ABSORPTION; WURTZITE; PURITY; STATES; MOVPE;

D O I：

10.1016/j.tsf.2013.04.004

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

InN thin films have been grown using a pressurized-reactor metalorganic vapor phase epitaxy system at 500-700 degrees C under the pressure of 2.1 x 10(5) Pa. Photoluminescence (PL), optical reflectance and transmission measurements were performed at room temperature. We found that optical properties of these as-grown films strongly depend on the growth temperature. By analyzing the reflectance spectra, it is found that the calculated carrier concentrations of the films increased with decreasing growth temperature. Room-temperature photoluminescence spectra show that the films grown at temperatures higher than 575 degrees C have strong emission peaks at 0.68-0.75 eV, while those grown at temperatures lower than and equal to 575 degrees C have negligible emission. The quenching of the emission is attributed to the existences of cubic InN and a high-density of nonradiative recombination centers in the films grown at low growth temperature region. Especially for the case of high temperature growth, the growth temperature dependence of the absorption-edge energy shows a similar tendency with that of the PL peak energy, both blue-shifted with decreasing the growth temperature possibly due to the well-known Burstein-Moss effects. From these results, an optimum growth temperature of 675 degrees C in the pressurized growth could be obtained. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：152 / 155

页数：4

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