Thermomigration-induced asymmetrical precipitation of Ag3Sn plates in micro-scale Cu/Sn-3.5Ag/Cu interconnects

被引:14
作者
Huang, M. L. [1 ]
Yang, F. [1 ]
Zhao, N. [1 ]
机构
[1] Dalian Univ Technol, Sch Mat Sci & Engn, Elect Packaging Mat Lab, Dalian 116024, Peoples R China
基金
中国国家自然科学基金;
关键词
Thermomigration; Synchrotron radiation; Crystal growth; Precipitation; Intermetallic compound; LEAD-FREE SOLDERS; SN-AG; INTERMETALLIC COMPOUNDS; IN-SITU; CU; BEHAVIOR; JOINTS; MORPHOLOGY; ALLOYS; GROWTH;
D O I
10.1016/j.matdes.2015.09.042
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Understanding the microstructural changes induced by thermomigration during thermal bonding process is important to micro-scale solder interconnects. In the present work, the precipitation of Ag3Sn plates in 50 mu m Cu/Sn-3.5Ag/Cu interconnects under thermomigration has been in situ characterized using synchrotron radiation real-time imaging technology. The precipitation of Ag3Sn plates is found to be asymmetrical, i.e., Ag3Sn plates preferentially precipitate on the cold end rather than the hot end in the interconnects; even if precipitate on the hot end, the Ag3Sn plates tend to dissolve into the molten solder during the subsequent cooling. It is shown that the asymmetrical precipitation of Ag3Sn plates is induced by directional thermomigration of Ag atoms toward the cold end under the temperature gradient across the interconnects, and the simulated temperature gradient is 172 degrees C/cm in the present work. The asymmetrical precipitation of Ag3Sn plates is analyzed and discussed from the viewpoint of thermomigration-affected nucleation and flux-controlled growth. (C) 2015 Elsevier Ltd. All rights reserved.
引用
收藏
页码:116 / 120
页数:5
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