Optical absorption in silicon layers in the presence of charge inversion/accumulation or ion implantation

被引：26

作者：

Alloatti, L. ^{[1
,2
]}

Lauermann, M. ^{[1
,2
]}

Suergers, C. ^{[3
,4
]}

Koos, C. ^{[1
,2
]}

Freude, W. ^{[1
,2
]}

Leuthold, J. ^{[1
,2
,5
]}

机构：

[1] Karlsruhe Inst Technol, Inst IPQ, D-76131 Karlsruhe, Germany

[2] Karlsruhe Inst Technol, Inst IMT, D-76131 Karlsruhe, Germany

[3] Karlsruhe Inst Technol, Inst Phys, D-76049 Karlsruhe, Germany

[4] Karlsruhe Inst Technol, DFG Ctr Funct Nanostruct, D-76049 Karlsruhe, Germany

[5] ETH, Inst Electromagnet Fields IFH, Zurich, Switzerland

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 05期

基金：

欧洲研究理事会;

关键词：

ELECTROOPTIC MODULATOR; DIFFUSED LAYERS; MOBILITY MODEL; WAVE-GUIDES; RESISTIVITY; TRANSMISSION; DEPENDENCE; SIMULATION;

D O I：

10.1063/1.4817255

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We determine the optical losses in gate-induced charge accumulation/inversion layers at a Si/SiO2 interface. Comparison between gate-induced charge layers and ion-implanted thin silicon films having an identical sheet resistance shows that optical losses can be significantly lower for gate-induced layers. For a given sheet resistance, holes produce higher optical loss than electrons. Measurements have been performed at lambda = 1550 nm. (C) 2013 Author(s).

引用

页数：5

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