Grazing-incidence x-ray fluorescence analysis for non-destructive determination of In and Ga depth profiles in Cu(In,Ga)Se2 absorber films

被引：20

作者：

Streeck, C. ^{[1
,2
]}

Brunken, S. ^{[1
]}

Gerlach, M. ^{[2
]}

Herzog, C. ^{[3
]}

Hoenicke, P. ^{[2
]}

Kaufmann, C. A. ^{[1
]}

Lubeck, J. ^{[2
]}

Pollakowski, B. ^{[2
]}

Unterumsberger, R. ^{[2
]}

Weber, A. ^{[1
]}

Beckhoff, B. ^{[2
]}

Kanngiesser, B. ^{[3
]}

Schock, H. -W. ^{[1
]}

Mainz, R. ^{[1
]}

机构：

[1] Helmholtz Zentrum Berlin Mat & Energie, D-14109 Berlin, Germany

[2] Phys Tech Bundesanstalt, D-10587 Berlin, Germany

[3] Tech Univ Berlin, Inst Opt & Atomare Phys, D-10623 Berlin, Germany

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 11期

关键词：

THIN-FILMS; SOLAR-CELLS; CALIBRATION; DETECTORS;

D O I：

10.1063/1.4821267

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Development of highly efficient thin film solar cells involves band gap engineering by tuning their elemental composition with depth. Here we show that grazing incidence X-ray fluorescence (GIXRF) analysis using monochromatic synchrotron radiation and well-characterized instrumentation is suitable for a non-destructive and reference-free analysis of compositional depth profiles in thin films. Variation of the incidence angle provides quantitative access to the in-depth distribution of the elements, which are retrieved from measured fluorescence intensities by modeling parameterized gradients and fitting calculated to measured fluorescence intensities. Our results show that double Ga gradients in Cu(In1-x,Ga-x)Se-2 can be resolved by GIXRF. (C) 2013 AIP Publishing LLC.

引用

页数：5

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