Effect of the Si excess on the structure and the optical properties of Nd-doped Si-rich silicon oxide

被引：12

作者：

Liang, C-H. ^{[1
]}

Debieu, O. ^{[1
]}

An, Y-T ^{[1
]}

Khomenkova, L. ^{[1
]}

Cardin, J. ^{[1
]}

Gourbilleau, F. ^{[1
]}

机构：

[1] Ensicaen, CIMAP, UMR CNRS CEA ENSICAEN UCBN, F-14050 Caen 4, France

来源：

JOURNAL OF LUMINESCENCE | 2012年 / 132卷 / 12期

关键词：

Si-rich-silicon oxide; Neodymium; Magnetron sputtering; Refractive index; Infrared absorption; Photoluminescence; MU-M PHOTOLUMINESCENCE; ENERGY-TRANSFER; ER; NANOCRYSTALS; ERBIUM; LAYERS; IONS; NANOCLUSTERS;

D O I：

10.1016/j.jlumin.2012.01.046

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Nd-doped Si-rich silicon oxide thin films were produced by radio frequency magnetron co-sputtering of three confocal cathodes: Si, SiO2, and Nd2O3, in pure argon plasma at 500 degrees C. The microstructure and optical properties of the films were investigated versus silicon excess and post-deposition annealing treatment by means of ellipsometry and Fourier transform infrared spectrometry as well as by the photoluminescence method. A notable emission from Nd3+ ions was obtained for the as-deposited sample, while the films annealed at 900 degrees C showed the highest peak intensity. The maximum emission was observed for the films with 4.7 at% of Si excess. (c) 2012 Elsevier B.V. All rights reserved.

引用

页码：3118 / 3121

页数：4

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