Direct Evidence of the Overshoot Suppression in Ta2O5-Based Resistive Switching Memory With an Integrated Access Resistor

被引：24

作者：

Fan, Yang-Shun ^{[1
]}

Zhang, Leqi ^{[2
]}

Crotti, Davide ^{[2
]}

Witters, Thomas ^{[2
]}

Jurczak, Malgorzata ^{[2
]}

Govoreanu, Bogdan ^{[2
]}

机构：

[1] Natl Chiao Tung Univ, Dept Photon, Inst Electroopt Engn, Hsinchu 30010, Taiwan

[2] IMEC, B-3001 Louvain, Belgium

来源：

IEEE ELECTRON DEVICE LETTERS | 2015年 / 36卷 / 10期

关键词：

Overshoot suppression; RRAM; resistive switching; Ta2O5; TaOx; RRAM self-capacitance; integrated access resistor;

D O I：

10.1109/LED.2015.2470081

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate suppression of the overshoot current effect on a resistive random access memory device with a TiN/Ta2O5/TaOx/TaN/TiN stack structure. Using test structures with an integrated 5-k Omega series resistor, a nearly 1:1 relation between the compliance current and the first maximum reset current has been achieved, together with an opening of the ON/OFF resistance window to over 100. Besides, the cell size also plays an important role on overshoot suppression, which we relate to the effect of the device self-capacitance discharge during the set switching. According to the experimental results, a simple model for the access circuitry is proposed, which is able to explain well the overshoot impact, by identifying the main capacitance discharge loops during device operation.

引用

页码：1027 / 1029

页数：3

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