Characterization of defect levels in undoped n-BaSi2 epitaxial films on Si(111) by deep-level transient spectroscopy

被引：14

作者：

Takeuchi, Hiroki ^{[1
]}

Du, Weijie ^{[1
]}

Baba, Masakazu ^{[1
]}

Takabe, Ryota ^{[1
]}

Toko, Kaoru ^{[1
]}

Suemasu, Takashi ^{[1
,2
]}

机构：

[1] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

[2] CREST, Japan Sci & Technol Agcy, Chiyoda Ku, Tokyo 1020075, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2015年 / 54卷 / 07期

基金：

日本科学技术振兴机构;

关键词：

MOLECULAR-BEAM EPITAXY; SOLAR-CELLS; BASI2; EFFICIENCY; BETA-FESI2; SI;

D O I：

10.7567/JJAP.54.07JE01

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electrically active defect levels in 650-nm-thick undoped n-BaSi2 epitaxial layers grown by molecular beam epitaxy were investigated by deep-level transient spectroscopy (DLTS) using undoped n-BaSi2/p-Si heterojunction diodes. The layer structure was designed so that the depletion region extended toward the n-BaSi2 layers under reverse bias conditions. DLTS revealed the presence of majority-carrier (electron) traps located at approximately 0.1 and 0.2 eV below the bottom of the conduction band. The densities of these trap levels were approximately 1 x 10(15) cm(-3). Photoresponse spectra are also discussed in relation to these trap levels. Minority-carrier traps were not detected in this work. (C) 2015 The Japan Society of Applied Physics

引用

页数：5

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