Characterization of defect levels in undoped n-BaSi2 epitaxial films on Si(111) by deep-level transient spectroscopy

被引：14

作者：

Takeuchi, Hiroki ^{[1
]}

Du, Weijie ^{[1
]}

Baba, Masakazu ^{[1
]}

Takabe, Ryota ^{[1
]}

Toko, Kaoru ^{[1
]}

Suemasu, Takashi ^{[1
,2
]}

机构：

[1] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

[2] CREST, Japan Sci & Technol Agcy, Chiyoda Ku, Tokyo 1020075, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2015年 / 54卷 / 07期

基金：

日本科学技术振兴机构;

关键词：

MOLECULAR-BEAM EPITAXY; SOLAR-CELLS; BASI2; EFFICIENCY; BETA-FESI2; SI;

D O I：

10.7567/JJAP.54.07JE01

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electrically active defect levels in 650-nm-thick undoped n-BaSi2 epitaxial layers grown by molecular beam epitaxy were investigated by deep-level transient spectroscopy (DLTS) using undoped n-BaSi2/p-Si heterojunction diodes. The layer structure was designed so that the depletion region extended toward the n-BaSi2 layers under reverse bias conditions. DLTS revealed the presence of majority-carrier (electron) traps located at approximately 0.1 and 0.2 eV below the bottom of the conduction band. The densities of these trap levels were approximately 1 x 10(15) cm(-3). Photoresponse spectra are also discussed in relation to these trap levels. Minority-carrier traps were not detected in this work. (C) 2015 The Japan Society of Applied Physics

引用

页数：5

共 36 条

[21] Study of silicon-silicon nitride interface properties on planar (100), planar (111) and textured surfaces using deep-level transient spectroscopy [J].

Gong, Chun ;

Simoen, Eddy ;

Posthuma, Niels E. ;

Van Kerschaver, Emmanuel ;

Poortmans, Jef ;

Mertens, Robert .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2010, 43 (48)

[22] Conductance Deep-Level Transient Spectroscopy and Current Transport Mechanisms in Au|Pt|n-GaN Schottky Barrier Diodes [J].

Gassoumi, M. .

PHYSICS OF THE SOLID STATE, 2020, 62 (04) :636-641

[23] Mechanism of strain relaxation in BaSi2 epitaxial films on Si(111) substrates during post-growth annealing and application for film exfoliation [J].

Hara, Kosuke O. ;

Usami, Noritaka ;

Nakamura, Kotaro ;

Takabe, Ryouta ;

Baba, Masakazu ;

Toko, Kaoru ;

Suemasu, Takashi .

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 12, 2013, 10 (12) :1677-1680

[24] Probing the trap states in N-i-P Sb2(S,Se)3 solar cells by deep-level transient spectroscopy [J].

Lian, Weitao ;

Tang, Rongfeng ;

Ma, Yuyuan ;

Wu, Chunyan ;

Chen, Chao ;

Wang, Xiaomin ;

Fang, Fang ;

Zhang, Jianwang ;

Wang, Zheng ;

Ju, Huanxin ;

Zhu, Changfei ;

Chen, Tao .

JOURNAL OF CHEMICAL PHYSICS, 2020, 153 (12)

[25] Deep levels in the MBE ZnO: As/n-GaN diodes - Photoluminescence, electrical properties and deep level transient spectroscopy [J].

Zielony, E. ;

Przezdziecka, E. ;

Placzek-Popko, E. ;

Lisowski, W. ;

Stachowicz, M. ;

Paradowska, K. M. ;

Jakiela, R. ;

Kozanecki, A. .

JOURNAL OF ALLOYS AND COMPOUNDS, 2018, 742 :296-303

[26] Investigation of the properties of deep-level defect in Cu(In,Ga)Se2 thin films by steady-state photocapacitance and time-resolved photoluminescence measurements [J].

Hu, Xiaobo ;

Sakurai, Takeaki ;

Yamada, Akimasa ;

Ishizuka, Shogo ;

Niki, Shigeru ;

Akimoto, Katsuhiro .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2015, 54 (04)

[27] DLTS study of annihilation of oxidation induced deep-level defects in Ni/SiO2/n-Si MOS structures [J].

Shashank, N. ;

Gupta, Sanjeev K. ;

Madhu, K. V. ;

Akhtar, J. ;

Damle, R. .

BULLETIN OF MATERIALS SCIENCE, 2011, 34 (07) :1627-1631

[28] Defect levels in Cu2ZnSn(SxSe1-x)4 solar cells probed by current-mode deep level transient spectroscopy [J].

Das, Sandip ;

Chaudhuri, Sandeep K. ;

Bhattacharya, Raghu N. ;

Mandal, Krishna C. .

APPLIED PHYSICS LETTERS, 2014, 104 (19)

[29] Investigation of traps in halide vapor-phase epitaxy-grown β-Ga2O3 epilayers/n+-Ga2O3 using deep-level transient spectroscopy [J].

Sheoran, Hardhyan ;

Kaushik, Janesh K. ;

Kumar, Vikram ;

Singh, Rajendra .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2024, 39 (12)

[30] Highly Improved Sb2S3 Sensitized-Inorganic-Organic Heterojunction Solar Cells and Quantification of Traps by Deep-Level Transient Spectroscopy [J].

Choi, Yong Chan ;

Lee, Dong Uk ;

Noh, Jun Hong ;

Kim, Eun Kyu ;

Seok, Sang Il .

ADVANCED FUNCTIONAL MATERIALS, 2014, 24 (23) :3587-3592

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