Determination of Ultimate Leakage Through Rutile TiO2 and Tetragonal ZrO2 From Ab Initio Complex Band Calculations

被引：6

作者：

Clima, Sergiu ^{[1
]}

Kaczer, B. ^{[1
]}

Govoreanu, B. ^{[1
]}

Popovici, M. ^{[1
]}

Swerts, J. ^{[1
]}

Verhulst, A. S. ^{[1
]}

Jurczak, M. ^{[1
]}

De Gendt, S. ^{[1
,2
]}

Pourtois, G. ^{[1
,3
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

[2] Katholieke Univ Leuven, B-3000 Louvain, Belgium

[3] Univ Antwerp, BE-2000 Antwerp, Belgium

来源：

IEEE ELECTRON DEVICE LETTERS | 2013年 / 34卷 / 03期

关键词：

Imaginary bands; TiO2; tunneling effective mass; ZrO2;

D O I：

10.1109/LED.2013.2238885

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

First-principle complex band structures have been computed for rutile TiO2 and tetragonal ZrO2 insulating materials that are of current technological relevance to dynamic random accessmemorymetal-insulator-metal (MIM) capacitors. From the magnitude of the complex wave vectors in different orientations, the most penetrating orientations have been identified. Tunneling effective masses m(tunnel) have been extracted, are shown to be a crucial parameter for the intrinsic leakage, and are identified to be an important parameter in further scaling of MIM capacitors.

引用

页码：402 / 404

页数：3

共 17 条

[1] COMPLEX BAND STRUCTURES OF ZINCBLENDE MATERIALS [J].

CHANG, YC .

PHYSICAL REVIEW B, 1982, 25 (02) :605-619

[2] High density and low leakage current in TiO2 MIM capacitors processed at 300 °C [J].

Cheng, C. H. ;

Lin, S. H. ;

Jhou, K. Y. ;

Chen, W. J. ;

Chou, C. P. ;

Yeh, F. S. ;

Hu, J. ;

Hwang, M. ;

Arikado, T. ;

McAlister, S. P. .

IEEE ELECTRON DEVICE LETTERS, 2008, 29 (08) :845-847

[3]

Chiang KC, 2005, 2005 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, P62

[4] Complex band structure and the band alignment problem at the Si-high-k dielectric interface -: art. no. 195306 [J].

Demkov, AA ;

Fonseca, LRC ;

Verret, E ;

Tomfohr, J ;

Sankey, OF .

PHYSICAL REVIEW B, 2005, 71 (19)

[5] Epitaxial growth of high-κ TiO2 rutile films on RuO2 electrodes [J].

Froehlich, K. ;

Aarik, J. ;

Tapajna, M. ;

Rosova, A. ;

Aidla, A. ;

Dobrocka, E. ;

Huskova, K. .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2009, 27 (01) :266-270

[6] QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials [J].

Giannozzi, Paolo ;

Baroni, Stefano ;

Bonini, Nicola ;

Calandra, Matteo ;

Car, Roberto ;

Cavazzoni, Carlo ;

Ceresoli, Davide ;

Chiarotti, Guido L. ;

Cococcioni, Matteo ;

Dabo, Ismaila ;

Dal Corso, Andrea ;

de Gironcoli, Stefano ;

Fabris, Stefano ;

Fratesi, Guido ;

Gebauer, Ralph ;

Gerstmann, Uwe ;

Gougoussis, Christos ;

Kokalj, Anton ;

Lazzeri, Michele ;

Martin-Samos, Layla ;

Marzari, Nicola ;

Mauri, Francesco ;

Mazzarello, Riccardo ;

Paolini, Stefano ;

Pasquarello, Alfredo ;

Paulatto, Lorenzo ;

Sbraccia, Carlo ;

Scandolo, Sandro ;

Sclauzero, Gabriele ;

Seitsonen, Ari P. ;

Smogunov, Alexander ;

Umari, Paolo ;

Wentzcovitch, Renata M. .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2009, 21 (39)

[7] An effective model for analysing tunneling gate leakage currents through ultrathin oxides and high-k gate stacks from Si inversion layers [J].

Govoreanu, B ;

Blomme, P ;

Henson, K ;

Van Houdt, J ;

De Meyer, K .

SOLID-STATE ELECTRONICS, 2004, 48 (04) :617-625

[8] Strong influence of complex band structure on tunneling electroresistance: A combined model and ab initio study [J].

Hinsche, N. F. ;

Fechner, M. ;

Bose, P. ;

Ostanin, S. ;

Henk, J. ;

Mertig, I. ;

Zahn, P. .

PHYSICAL REVIEW B, 2010, 82 (21)

[9] The effective mass of an electron when tunneling through a molecular wire [J].

Joachim, C ;

Magoga, M .

CHEMICAL PHYSICS, 2002, 281 (2-3) :347-352

[10]

Kaczer B., 2012, 17 WORKSH DIEL MICR

← 1 2 →