Fabrication and characterization of P-N dual acceptor doped p-type ZnO thin films

被引：25

作者：

Sui, Y. R. ^{[1
]}

Yao, B. ^{[2
]}

Xiao, L. ^{[1
]}

Yang, L. L. ^{[1
]}

Cao, J. ^{[1
]}

Li, X. F. ^{[1
]}

Xing, G. Z. ^{[3
]}

Lang, J. H. ^{[1
]}

Li, X. Y. ^{[1
]}

Lv, S. Q. ^{[1
]}

Meng, X. W. ^{[1
]}

Liu, X. Y. ^{[1
]}

Yang, J. H. ^{[1
]}

机构：

[1] Jilin Normal Univ, Minist Educ, Key Lab Funct Mat Phys & Chem, Inst Condensed State Phys, Siping 136000, Peoples R China

[2] Jilin Univ, Coll Phys, State Key Lab Superhard Mat, Changchun 130023, Peoples R China

[3] Univ New S Wales, Sch Mat Sci & Engn, Sydney, NSW 2052, Australia

来源：

APPLIED SURFACE SCIENCE | 2013年 / 287卷

基金：

中国国家自然科学基金;

关键词：

ZnO film; Dual acceptor doping; Electrical properties; Magnetron sputtering; ELECTRICAL-PROPERTIES; TEMPERATURE; NITROGEN;

D O I：

10.1016/j.apsusc.2013.10.010

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

P and N dual-acceptor doped p-type zinc oxide ( ZnO: (P, N)) films have been realized by radio frequency (rf) magnetron sputtering and post-annealing techniques. The X-ray diffraction (XRD), secondary ion mass spectrometry (SIMS), X-ray photoelectron spectroscopy (XPS) and the Hall measurement techniques were employed to investigate the structural and the electrical properties in detail. Results indicated the electrical properties of the ZnO:(P, N) films were extremely sensitive to the annealing temperature and the conduction type could be changed dramatically from n-type to p-type, and finally changed to weak p-type in a range from 650 C to 850 C. The p-type ZnO:(P, N) film with the lower resistivity of 3.98 SZ cm, a hole concentration and Hall mobility of 1.16 x 1018 cm-3 and 1.35 cm2/Vs, respectively, was obtained at an optimal annealing temperature of 800 C. The p-type conduction behavior of the ZnO:(P, N) film was confirmed by the rectifying I-V characteristics of the p-ZnO:(P, N)/n-ZnO homojunction. The chemical bonding states of P and N doped in ZnO:(P, N) film were examined by XPS analysis. 2013 Elsevier B.V. All rights reserved.

引用

页码：484 / 489

页数：6

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