CMOS Handset Power Amplifiers: Directions for the Future

被引：0

作者：

Asbeck, Peter ^{[1
]}

Larson, Lawrence ^{[2
]}

Kimball, Donald ^{[1
]}

Buckwalter, James ^{[1
]}

机构：

[1] Univ Calif San Diego, La Jolla, CA 92093 USA

[2] Brown Univ, Providence, RI 02912 USA

来源：

2012 IEEE CUSTOM INTEGRATED CIRCUITS CONFERENCE (CICC) | 2012年

关键词：

RF;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

While the present market for power amplifiers in wireless handsets is largely met by GaAs HBTs, CMOS technology can provide major advantages including high integration levels, scalability, and digital control. This paper reviews possible directions for future CMOS PA development including FET stacking, envelope tracking, digital predistortion, and new architectures based on digital control, that promise to add to the advantages of CMOS in LTE applications.

引用

页数：6

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