Gate-Defined Confinement in Bilayer Graphene-Hexagonal Boron Nitride Hybrid Devices

被引：98

作者：

Goossens, Augustinus M. ^{[1
]}

Driessen, Stefanie C. M. ^{[1
]}

Baart, Tim A. ^{[1
]}

Watanabe, Kenji ^{[2
]}

Taniguchi, Takashi ^{[2
]}

Vandersypen, Lieven M. K. ^{[1
]}

机构：

[1] Delft Univ Technol, Kavli Inst Nanosci, NL-2600 GA Delft, Netherlands

[2] Natl Inst Mat Sci, Adv Mat Lab, Tsukuba, Ibaraki 3050044, Japan

来源：

NANO LETTERS | 2012年 / 12卷 / 09期

基金：

欧洲研究理事会;

关键词：

Graphene; bilayer graphene; hexagonal boron nitride; confinement; coulomb blockade; quantized conductance; QUANTIZED CONDUCTANCE; QUANTUM;

D O I：

10.1021/nl301986q

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report on the fabrication and measurement of nanoscale devices that permit electrostatic confinement in bilayer graphene on a substrate. The graphene bilayer is sandwiched between hexagonal boron nitride bottom and top gate dielectrics. Top gates are patterned such that constrictions and islands can be electrostatically induced. The high quality of the devices becomes apparent from the smooth pinch-off characteristics of the constrictions at low temperature with features indicative of conductance quantization. The islands exhibit clear Coulomb blockade and single-electron transport.

引用

页码：4656 / 4660

页数：5

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