Microstructure of low stacking fault energy silver processed by different routes of severe plastic deformation

被引：18

作者：

Hegedus, Zoltan ^{[1
]}

Gubicza, Jeno ^{[1
]}

Kawasaki, Megumi ^{[2
,3
]}

Chinh, Nguyen Q. ^{[1
]}

Fogarassy, Zsolt ^{[4
]}

Langdon, Terence G. ^{[2
,3
,5
]}

机构：

[1] Eotvos Lorand Univ, Dept Mat Phys, H-1117 Budapest, Hungary

[2] Univ So Calif, Dept Aerosp & Mech Engn, Los Angeles, CA 90089 USA

[3] Univ So Calif, Dept Mat Sci, Los Angeles, CA 90089 USA

[4] Res Inst Tech Phys & Mat Sci, H-1525 Budapest, Hungary

[5] Univ Southampton, Mat Res Grp, Sch Engn Sci, Southampton SO17 1BJ, Hants, England

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2012年 / 536卷

基金：

欧洲研究理事会; 美国国家科学基金会; 匈牙利科学研究基金会;

关键词：

Silver; Stacking fault energy; Dislocations; Twins; Equal channel angular pressing; High-pressure torsion; HIGH-PRESSURE TORSION; CU; STABILITY; EVOLUTION; ALLOYS; ECAP;

D O I：

10.1016/j.jallcom.2011.10.070

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Samples of 4 N purity Ag were processed at room temperature (RT) by equal-channel angular pressing (ECAP) and high-pressure torsion (HPT) up to 8 passes and 20 revolutions, respectively. It was found that the minimum grain size was around 200 nm for both ECAP and HPT. However, the dislocation density and the twin boundary frequency were about three times larger in HPT due to the very high applied hydrostatic pressure. The maximum dislocation density (about 1.5 x 10(16) m(-2)) and twin boundary frequency (about 2%) achieved by HPT at RT are extremely high among pure fcc metals and this can be explained by the difficult annihilation of the highly dissociated dislocations due to the very low stacking fault energy in Ag. (c) 2011 Elsevier B.V. All rights reserved.

引用

页码：S190 / S193

页数：4

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