High-Quality-Factor Active Capacitors for Millimeter-Wave Applications

被引：9

作者：

Ghadiri, Aliakbar ^{[1
]}

Moez, Kambiz ^{[1
]}

机构：

[1] Univ Alberta, Elect & Comp Engn Dept, Edmonton, AB 26G 2V4, Canada

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2012年 / 60卷 / 12期

基金：

加拿大自然科学与工程研究理事会;

关键词：

Active capacitance; active filter; millimeter wave; phase shifter; RF; DESIGN; INDUCTORS;

D O I：

10.1109/TMTT.2012.2221475

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents single-ended and differential configurations of active capacitors that exhibit high-quality (Q) factor at millimeter-wave frequencies. Both structures provide a small tunable negative resistance that can be exploited to compensate for the loss of other components, such as inductors in millimeter-wave integrated circuits. Unlike passive capacitors, which exhibit increasing capacitance with frequency (due to the inductive parasitic), the proposed active capacitors display relatively frequency-independent values. Fabricated in 0.13-mu m IBM CMOS, tunable Q values of more than 20 are obtained at 60 GHz. A 40-GHz band-pass filter is designed and fabricated using the single-ended active capacitor cells in a 0.13-mu m IBM CMOS process exhibiting 0-dB insertion loss.

引用

页码：3710 / 3718

页数：9