Threshold voltage model for short-channel undoped symmetrical double-gate MOSFETs

被引：80

作者：

Tsormpatzoglou, Andreas ^{[1
]}

Dimitriadis, Charalabos A. ^{[1
]}

Clerc, Raphael

Pananakakis, G.

Ghibaudo, Gerard ^{[2
]}

机构：

[1] Aristotle Univ Thessaloniki, Dept Phys, Thessaloniki 54124, Greece

[2] Inst Natl Polytech Grenoble, Inst Microelect, Electromagnetisme & Photon Lab, MINATEC, F-38054 Grenoble 9, France

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2008年 / 55卷 / 09期

关键词：

double-gate (DG) MOSFET; threshold voltage modeling;

D O I：

10.1109/TED.2008.927394

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A simple threshold voltage model of an undoped symmetrical double-gate MOSFET has been developed, based on an analytical solution of Poisson's equation for the potential distribution. The model has been verified by comparing the threshold voltage roll-off with the channel length with simulation results for different silicon thicknesses, gate oxide thicknesses, and drain voltage values. Good agreement between model and simulation results is obtained by calibrating the minimum carrier charge sheet density adequate to achieve the turn-on condition.

引用

页码：2512 / 2516

页数：5