High-performance CdSe nanobelt based MESFETs and their application in photodetection

被引：25
作者：
Dai, Yu
Yu, Bin
Ye, Yu
Wu, Peicai
Meng, Hu
Dai, Lun [1 ]
Qin, Guogang
机构：
[1] Peking Univ, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China
来源：
JOURNAL OF MATERIALS CHEMISTRY | 2012年 / 22卷 / 35期
基金：
中国国家自然科学基金;
关键词：
FIELD-EFFECT TRANSISTORS; OPTOELECTRONIC DEVICES; CARBON-NANOTUBE; LOGIC-CIRCUITS; NANOWIRES; NANOCRYSTALS; DIODES;
D O I：
10.1039/c2jm32890a
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
High performance metal-semiconductor field-effect transistors (MESFETs) based on single n-CdSe nanobelts (NBs) have been fabricated and applied as photodetectors. Au is used as the gate metal, which formed a good Schottky contact with the CdSe NB with a rectification ratio of about 2 x 10(8). The CdSe NB MESFETs exhibit a near-zero threshold voltage (-0.55 V), low subthreshold swing (60.4 mV per dec), no clearly observed current hysteresis, and the highest on/off current ratio (5 x 10(8)) reported so far for NW/NB MESFETs. We have also investigated the photoresponse properties of these MESFETs. Typical CdSe NB MESFET based photodetectors have high current responsivity (similar to 1.4 x 10(3) AW(-1)), high gain (similar to 2.7 x 10(3)), and fast photoresponse speed ( the rise time and the decay time are about 35 and 60 mu s, respectively.) under a gate voltage of 1 V. All these results show that the CdSe NB based MESFETs can be promising candidates for both electronic and opto-electronic nanodevices.
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收藏
页码：18442 / 18446
页数：5
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