Synthesis of large-area graphene on molybdenum foils by chemical vapor deposition

被引：55

作者：

Wu, Yuanwen ^{[1
]}

Yu, Guanghui ^{[1
]}

Wang, Haomin ^{[1
]}

Wang, Bin ^{[1
,2
]}

Chen, Zhiying ^{[1
]}

Zhang, Yanhui ^{[1
]}

Wang, Bin ^{[1
,2
]}

Shi, Xiaoping ^{[1
]}

Xie, Xiaoming ^{[1
]}

Jin, Zhi ^{[3
]}

Liu, Xinyu ^{[3
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China

[2] Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China

[3] Chinese Acad Sci, Inst Microelect, Microwave Devices & Integrated Circuits Dept, Beijing 100029, Peoples R China

来源：

CARBON | 2012年 / 50卷 / 14期

基金：

中国国家自然科学基金;

关键词：

HIGH-QUALITY; FILMS; GROWTH;

D O I：

10.1016/j.carbon.2012.07.007

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We report the synthesis of large-area graphene films on Mo foils by chemical vapor deposition. X-ray diffraction indicates that the dissolution and segregation process governs the growth of graphene on Mo foils. Among all processing parameters investigated, the cooling rate is the key one to precisely control the thickness of graphene film. By optimizing the cooling rate between 1.5 and 10 degrees C/s, we managed to achieve graphene films ranging from mono- to tri-layer. Their uniformity and thickness were confirmed by Raman spectroscopy and optical measurements. The carrier mobility of films reaches as high as 193 cm(2) V-1 s(-1). Our experiments show that the Mo substrate has the similar simplicity and large tolerance to processing conditions as Cu. (C) 2012 Elsevier Ltd. All rights reserved.

引用

页码：5226 / 5231

页数：6

共 31 条

[1]

Bae S, 2010, NAT NANOTECHNOL, V5, P574, DOI [10.1038/nnano.2010.132, 10.1038/NNANO.2010.132]

[2] Electronic confinement and coherence in patterned epitaxial graphene [J].