Influence of Nb Doping Concentration on Bolometric Properties of RF Magnetron Sputtered Nb:TiO2-x Films

被引：3

作者：

Reddy, Y. Ashok Kumar ^{[1
]}

Shin, Young Bong ^{[1
]}

Kang, In-Ku ^{[1
]}

Lee, Hee Chul ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Elect Engn, 291 Daehak Ro, Daejeon 34141, South Korea

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2018年 / 47卷 / 03期

关键词：

Nb:TiO2-x; semiconductor; microstructure; resistivity; bolometric properties; TIO2; THIN-FILMS; SOL-GEL METHOD; DOPED TIO2; OPTICAL-PROPERTIES; NOISE; DETECTORS; ELEMENTS; ARRAYS; ENERGY; METAL;

D O I：

10.1007/s11664-017-6028-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The present study directly addresses the improved bolometric properties by means of different Nb doping concentrations into TiO2-x films. The x-ray diffraction patterns do not display any obvious diffraction peaks, suggesting that all the films deposited at room temperature had an amorphous structure. A small binding energy shift was observed in x-ray photo electron spectroscopy due to the change of chemical composition with Nb doping concentration. All the device samples exhibit linear I-V characteristics, which attests to the formation of good ohmic contact with low contact resistance between the Nb:TiO2-x (TNO) film and the electrode (Ti) material. The performance of the bolometric material can be evaluated through the temperature coefficient of resistance (TCR), and the absolute value of TCR was found to be increased from 2.54% to 2.78% with increasing the Nb doping concentration. The voltage spectral density of 1/f noise was measured in the frequency range of 1-60 Hz and found to be decreased with increase of Nb doping concentration. As a result, for 1 at.% Nb-doped TNO sample exhibits improved bolometric properties towards the good infrared image sensor device.

引用

页码：2171 / 2176

页数：6

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